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1. Product profile

1.1 General description

NPN/PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)

medium power Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Very low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

1.4 Quick reference data

PBSS4041SPN

60 V NPN/PNP low V

CEsat

(BISS) transistor

Rev. 2 — 20 October 2010 Product data sheet

Table 1. Product overview

Type number Package NPN/NPN

complement

PNP/PNP

complement

NXP Name

PBSS4041SPN SOT96-1 SO8 PBSS4041SN PBSS4041SP

 Loadswitch  Charging circuits

 Battery-driven devices  Power switches (e.g. motors, fans)

 Power management

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; NPN low V

CEsat

transistor

CEO

collector-emitter voltage open base - - 60 V

collector current - - 6.7 A

peak collector current single pulse; t

≤ 1ms --15A

CEsat

collector-emitter

saturation resistance

=4A; I

=0.2A

[1]

- 3248mΩ

Summary of content (20 pages)

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PBSS4041SPN 60 V NPN/PNP low VCEsat (BISS) transistor Rev. 2 — 20 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PBSS4041SPN Package NXP Name NPN/NPN complement SOT96-1 SO8 PBSS4041SN PNP/PNP complement PBSS4041SP 1.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit open base - - −60 V - - −5.9 A - - −15 A - 47 70 mΩ TR2; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −4 A; IB = −0.4 A [1] [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit collector current - 6.7 A collector current - −5.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac346 3.0 Ptot (W) (1) 2.0 (2) 1.0 0.0 −75 (3) −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves 6. Thermal characteristics Table 7.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac347 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac348 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac349 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041SPN Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac350 1000 006aac351 16.0 (1) hFE IB (mA) = 300 IC (A) 240 800 180 12.0 (2) 270 210 150 120 90 600 60 8.0 30 (3) 400 4.0 200 0 10−1 1 10 102 103 0.0 0.0 104 105 IC (mA) 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 6. 006aac352 1.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac354 1 VCEsat (V) 006aac355 1 VCEsat (V) (1) 10−1 10−1 (2) (1) (3) 10−2 (2) 10−2 (3) 10−3 10−1 1 10 102 103 104 105 IC (mA) 10−3 10−1 1 102 103 104 105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac358 500 hFE 006aac359 −10.0 IB (mA) = −120 IC (A) (1) −96 −8.0 400 −60 −36 −24 −4.0 200 −84 −48 −6.0 (2) 300 −72 −108 (3) −12 −2.0 100 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0.0 0.0 VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 13. TR2 (PNP): DC current gain as a function of collector current; typical values 006aac360 −1.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 006aac362 −1 006aac363 −1 VCEsat (V) VCEsat (V) −10−1 (1) (2) −10−1 (1) (2) −10−2 (3) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 17.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 21. TR1 (NPN): BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; IBoff = −0.05 A Fig 22.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 23. TR2 (PNP): BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A Fig 24.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 9. Package outline 5.0 4.8 1.75 1.0 0.4 6.2 5.8 4.0 3.8 pin 1 index 1.27 0.49 0.36 Dimensions in mm 0.25 0.19 03-02-18 Fig 25. Package outline SOT96-1 (SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 26. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 27.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4041SPN v.2 20101020 Product data sheet - PBSS4041SPN v.1 Modifications: PBSS4041SPN v.1 PBSS4041SPN Product data sheet • Figure 1 “Per device: Power derating curves”: updated. 20100714 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.
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PBSS4041SPN NXP Semiconductors 60 V NPN/PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .