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PBSS4112PAN

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

29 November 2012 Product data sheet

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1. Product profile

1.1 General description

NPN/NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

1.2 Features and benefits

•

Very low collector-emitter saturation voltage V

CEsat

•

High collector current capability I

and I

•

High collector current gain h

at high I

•

Reduced Printed-Circuit Board (PCB) requirements

•

High energy efficiency due to less heat generation

•

AEC-Q101 qualified

1.3 Applications

•

Load switch

•

Battery-driven devices

•

Power management

•

Charging circuits

•

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter

voltage

open base - - 120 V

collector current - - 1 A

peak collector current single pulse; t

≤ 1 ms - - 1.5 A

Per transistor

CEsat

collector-emitter

saturation resistance

= 500 mA; I

= 50 mA; pulsed;

≤ 300 µs; δ ≤ 0.02 ; T

amb

= 25 °C

- - 240 mΩ

Summary of content (17 pages)

PAGE 1
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP. 1.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2 Simplified outline 6 5 7 1 Graphic symbol 4 8 2 3 Transparent top view C1 B2 E2 TR2 TR1 E1 B1 C2 sym140 DFN2020-6 (SOT1118) 3. Ordering information Table 3.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Max Unit IBM peak base current single pulse; tp ≤ 1 ms - 1 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 370 mW [2] - 570 mW [3] - 530 mW [4] - 700 mW [5] - 450 mW [6] - 760 mW [7] - 700 mW [8] - 1450 mW [1] - 510 mW [2] - 780 mW [3] - 730 mW [4] - 960 mW [5] - 620 mW [6] - 1040 mW [7] - 960 mW [8] - 2000 mW Per de
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5) 0.5 (6) (7) (8) 0 -75 -25 25 75 (1) 4-layer PCB 70 µm, mounting pad for collector 1 cm (2) FR4 PCB 70 µm, mounting pad for collector 1 cm (3) 4-layer PCB 70 µm, standard footprint Fig. 1.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit [1] - - 245 K/W [2] - - 160 K/W [3] - - 171 K/W [4] - - 130 K/W [5] - - 202 K/W [6] - - 120 K/W [7] - - 130 K/W [8] - - 63 K/W Per device Rth(j-a) thermal resistance from junction to ambient [1] [2] [3] [4] [5] [6] [7] [8] in free air Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprin
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 006aad167 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 1 10-5 0.01 0 10-4 10-3 10-2 10-1 FR4 PCB 35 µm, mounting pad for collector 1 cm Fig. 3. 1 10 102 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aad168 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 006aad169 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 1 10-5 0 10-4 10-3 10-2 10-1 4-layer PCB 35 µm, mounting pad for collector 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac610 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.5 0.2 0.1 0.05 10 0.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 006aac611 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0 1 5 10 0.01 10- 4 10- 3 10- 2 10- 1 FR4 PCB 70 µm, mounting pad for collector 1 cm Fig. 7. 1 10 102 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aad170 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 102 006aad171 duty cycle = 1 0.75 0.5 Zth(j-a) (K/W) 0.33 0.2 10 0.1 0.05 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 4-layer PCB 70 µm, mounting pad for collector 1 cm Fig. 9. 1 102 10 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions VBEsat base-emitter saturation IC = 500 mA; IB = 50 mA; Tamb = 25 °C voltage IC = 1 A; IB = 50 mA; pulsed; Min Typ Max Unit - - 1 V - - 1.1 V - - 1.1 V - - 0.9 V tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = 2 V; IC = 0.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor aaa-005715 1.2 aaa-005716 1.2 VBEsat (V) VBE (V) 1.0 (1) 0.8 (1) 0.8 (2) (2) 0.6 0.4 (3) (3) 0.4 0.0 10-1 1 10 102 0.2 10-1 103 104 IC (mA) 1 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb= 100 °C Fig. 12. Base-emitter voltage as a function of collector current; typical values aaa-005718 1 VCEsat (V) 103 104 IC (mA) Fig.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor aaa-005719 103 aaa-005720 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) (1) (2) (3) 1 1 (2) (3) 10-1 10-1 1 10 102 10-1 10-1 103 104 IC (mA) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 16.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 18. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 19. Test circuit for switching times 8.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 0.77 0.57 (2×) 2.1 1.9 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig. 20. Package outline DFN2020-6 (SOT1118) 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
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PBSS4112PAN NXP Semiconductors 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ......................