DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Nov 27
Philips Semiconductors Product specification 30 V, 1 A NPN low VCEsat (BISS) transistor PBSS4130T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM PARAMETER MAX.
Philips Semiconductors Product specification 30 V, 1 A NPN low VCEsat (BISS) transistor PBSS4130T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
Philips Semiconductors Product specification 30 V, 1 A NPN low VCEsat (BISS) transistor PBSS4130T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
Philips Semiconductors Product specification 30 V, 1 A NPN low VCEsat (BISS) transistor PBSS4130T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification 30 V, 1 A NPN low VCEsat (BISS) transistor PBSS4130T DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date.
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