DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PBSS4140U 40 V low VCEsat NPN transistor Product data sheet Supersedes data of 2001 Mar 27 2001 Jul 13
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capabilities. VCEO collector-emitter voltage 40 V ICM peak collector current 2 A RCEsat equivalent on-resistance <500 mΩ • Improved device reliability due to reduced heat generation. • Enhanced performance over SOT231A general purpose packaged transistors. PARAMETER MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 500 K/W in free air; note 2 357 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U MLD660 1000 MLD656 10 handbook, halfpage handbook, halfpage hFE 800 VBE (1) (V) 600 (2) (1) 1 400 (2) (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U MLD659 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 1000 800 IC (mA) VCE = 10 V. Fig.6 Transition frequency as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4140U DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
