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1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70)

Surface Mounted Device (SMD) plastic package.

PNP complement: PBSS5160U.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability: I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 High voltage DC-to-DC conversion

 High voltage MOSFET gate driving

 High voltage motor control

 High voltage power switches (e.g. motors, fans)

 Automotive applications

1.4 Quick reference data

[1] Device mounted on a ceramic PCB, Al

, standard footprint.

[2] Pulse test: t

≤ 300 μs; δ ≤ 0.02.

PBSS4160U

60 V, 1 A NPN low V

CEsat

(BISS) transistor

Rev. 03 — 11 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 60 V

collector current (DC)

[1]

--1A

peak collector current single pulse; t

≤ 1ms--2A

CEsat

collector-emitter saturation

resistance

=1A; I

=100mA

[2]

- 230 280 mΩ

Summary of content (14 pages)

PAGE 1
PBSS4160U 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160U. 1.
PAGE 2
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number PBSS4160U Package Name Description Version SC-70 plastic surface mounted package; 3 leads SOT323 4. Marking Table 4.
PAGE 3
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 500 K/W [2] - - 357 K/W [3] - - 301 K/W - - 150 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 5
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 006aaa503 103 Zth(j-a) (K/W) δ=1 0.75 0.50 102 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa504 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.
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PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 7
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 006aaa505 800 hFE 006aaa506 1.2 VBE (V) (1) 1.0 600 (2) 0.8 (1) 400 (2) 0.6 (3) 200 (3) 0.4 0 10−1 1 102 10 0.2 10−1 103 104 IC (mA) 1 10 VCE = 5 V VCE = 5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. 102 103 104 IC (mA) (3) Tamb = 100 °C DC current gain as a function of collector current; typical values Fig 6.
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PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 006aaa509 1.2 VBEsat (V) 006aaa510 103 RCEsat (Ω) 1.0 102 (1) 0.8 10 (2) 0.6 (3) (1) (2) (3) 1 0.4 0.2 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 IC/IB = 20 1 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 9. 10 Base-emitter saturation voltage as a function of collector current; typical values 006aaa511 2.
PAGE 9
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 14.
PAGE 10
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 9. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm 04-11-04 Fig 15. Package outline SOT323 (SC-70) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 11. Soldering 2.65 0.75 1.325 1.30 solder lands 2 solder paste 0.60 2.35 0.85 (3×) 0.50 (3×) 1.90 3 solder resist occupied area 1 Dimensions in mm 0.55 (3×) 2.40 msa429 Fig 16. Reflow soldering footprint 4.60 4.00 1.15 2 3.65 2.10 3 2.70 solder lands 1 0.90 (2×) solder resist occupied area Dimensions in mm preferred transport direction during soldering msa419 Fig 17.
PAGE 12
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4160U_3 20091211 Product data sheet - PBSS4160U_2 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PAGE 13
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS4160U NXP Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .