PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. 2.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E1 emitter TR1 2 B1 base TR1 3 C2 collector TR2 4 E2 emitter TR2 5 B2 base TR2 6 C1 collector TR1 7 C1 collector TR1 8 C2 collector TR2 Simplified outline 6 5 7 1 Graphic symbol 4 8 2 3 Transparent top view C1 B2 E2 TR2 TR1 E1 B1 C2 sym140 DFN2020-6 (SOT1118) 6. Ordering information Table 3.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Max Unit IBM peak base current single pulse; tp ≤ 1 ms - 1 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 370 mW [2] - 570 mW [3] - 530 mW [4] - 700 mW [5] - 450 mW [6] - 760 mW [7] - 700 mW [8] - 1450 mW [1] - 510 mW [2] - 780 mW [3] - 730 mW [4] - 960 mW [5] - 620 mW [6] - 1040 mW [7] - 960 mW [8] - 2000 mW Per dev
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 1.5 006aad165 (1) Ptot (W) 1.0 (2) (3) (4) (5) 0.5 (6) (7) (8) 0 -75 -25 25 75 (1) 4-layer PCB 70 µm, mounting pad for collector 1 cm (2) FR4 PCB 70 µm, mounting pad for collector 1 cm (3) 4-layer PCB 70 µm, standard footprint Fig. 1.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit [1] - - 245 K/W [2] - - 160 K/W [3] - - 171 K/W [4] - - 130 K/W [5] - - 202 K/W [6] - - 120 K/W [7] - - 130 K/W [8] - - 63 K/W Per device Rth(j-a) thermal resistance from junction to ambient [1] [2] [3] [4] [5] [6] [7] [8] in free air Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 006aad167 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 1 10-5 0.01 0 10-4 10-3 10-2 10-1 FR4 PCB 35 µm, mounting pad for collector 1 cm Fig. 3. 1 10 102 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aad168 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 006aad169 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 1 10-5 0 10-4 10-3 10-2 10-1 4-layer PCB 35 µm, mounting pad for collector 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac610 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.5 0.2 0.1 0.05 10 0.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 006aac611 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0 1 5 10 0.01 10- 4 10- 3 10- 2 10- 1 FR4 PCB 70 µm, mounting pad for collector 1 cm Fig. 7. 1 10 102 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aad170 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 102 006aad171 duty cycle = 1 0.75 0.5 Zth(j-a) (K/W) 0.33 0.2 10 0.1 0.05 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 4-layer PCB 70 µm, mounting pad for collector 1 cm Fig. 9. 1 102 10 tp (s) 103 2 Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit RCEsat collector-emitter saturation resistance IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs; - - 145 mΩ - - 1 V - - 1 V - - 1.1 V - - 1.2 V - - 0.9 V VBEsat δ ≤ 0.02 ; Tamb = 25 °C base-emitter saturation IC = 500 mA; IB = 50 mA; Tamb = 25 °C voltage IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 006aad188 600 (1) hFE 400 006aad189 3 IB = 15 mA 13.5 12 10.5 IC (A) 9 2 (2) 7.5 6 4.5 (3) 200 1 3 1.5 0 10-1 1 10 102 0 103 104 IC (mA) VCE = 2 V 0 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 11. Collector current as a function of collectoremitter voltage; typical values (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 10.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 006aad192 1 006aad193 1 VCEsat (V) VCEsat (V) 10-1 10-1 (1) (2) (1) (3) 10-2 (2) 10-2 (3) 10-3 10-1 1 102 10 10-3 10-1 103 104 IC (mA) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 14.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 18. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 19. Test circuit for switching times 11.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 12. Package outline 2.1 1.9 0.65 max 1.1 0.9 0.77 0.57 (2×) 2.1 1.9 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig. 20. Package outline DFN2020-6 (SOT1118) 13. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.
PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15.
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PBSS4230PAN NXP Semiconductors 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ......................