DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat PBSS4240DPN QUICK REFERENCE DATA MAX. • High collector current capability IC and ICM SYMBOL PARAMETER UNIT NPN PNP • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − NPN − 1.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC471 800 MHC472 1.2 handbook, halfpage handbook, halfpage hFE VBE (1) (V) 600 (1) 0.8 (2) (2) 400 (3) 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC475 2 IC (A) MHC476 103 handbook, halfpage (1) (2) (3) handbook, halfpage RCEsat (Ω) (4) (5) (6) 1.6 102 (7) 1.2 (8) (9) 10 (10) 0.8 1 0.4 (1) 10−1 10−1 0 0.8 0.4 0 1.2 1.6 2 VCE (V) TR1 (NPN); Tamb = 25 °C. (1) (2) (3) (4) IB = 30 mA. IB = 27 mA. IB = 24 mA. IB = 21 mA. (5) IB = 18 mA. (9) IB = 6 mA. (6) IB = 15 mA. (7) IB = 12 mA. (8) IB = 9 mA. (10) IB = 3 mA.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC464 1000 MHC465 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) (1) −0.8 (2) 600 (3) (2) 400 −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC468 −1.2 MHC469 −2.4 IC (A) −2 handbook, halfpage handbook, halfpage IC (A) (4) (3) −0.8 (2) (1) (1) (2) (3) (4) (5) −1.6 (5) (6) (7) (8) (6) (7) −1.2 (9) (8) −0.4 −0.8 (9) (10) 0 0 −0.8 −0.4 −1.2 −0.4 0 −1.4 −2 VCE (V) 0 TR2 (PNP); Tamb = 25 °C. (1) (2) (3) (4) IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. (5) IB = −4.2 mA. (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC470 103 handbook, halfpage RCEsat (Ω) 102 10 (1) (2) 1 (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
