Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

PBSS4240X

40 V, 2 A NPN low VCEsat (BISS) transistor

15 October 2012 Product data sheet

Scan or click this QR code to view the latest information for this product

1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a medium power and

flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:

PBSS5240X.

1.2 Features and benefits

•

Low collector-emitter saturation voltage V

CEsat

•

High collector current capability I

and I

•

High efficiency due to less heat generation

1.3 Applications

•

DC-to-DC conversion

•

Supply line switching

•

Battery charger

•

LCD backlighting

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

•

Inductive load driver (e.g. relays, buzzers and motors)

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter

voltage

open base - - 40 V

collector current - - 2 A

peak collector current - - 3 A

CEsat

collector-emitter

saturation resistance

= 1 A; I

= 100 mA; pulsed;

≤ 300 µs; δ ≤ 0.02 ; T

amb

= 25 °C

- - 260 mΩ

CRM

repetitive peak

collector current

≤ 20 ms; δ ≤ 0.33 ; pulsed - - 2.5 A

Summary of content (12 pages)

PAGE 1
PBSS4240X 40 V, 2 A NPN low VCEsat (BISS) transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240X. 1.2 Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation 1.
PAGE 2
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol C B 3 2 1 E SOT89 sym123 3. Ordering information Table 3. Ordering information Type number Package PBSS4240X Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 4. Marking Table 4.
PAGE 3
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor Symbol Parameter Conditions [3] Min Max Unit - 1.35 W Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
PAGE 4
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 006aac680 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac681 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.
PAGE 5
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 006aac682 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 4. 10- 1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7.
PAGE 6
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor Symbol Parameter VBEsat VBEon fT Conditions Min Typ Max Unit base-emitter saturation IC = 1 A; IB = 100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 1.2 V base-emitter turn-on voltage VCE = 5 V; IC = 1 A; pulsed; tp ≤ 300 µs; - - 1.1 V transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz; 150 - - MHz - - 10 pF δ ≤ 0.
PAGE 7
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 006aad161 1.2 006aad162 1.2 VBEsat (V) VBE (V) 1.0 (1) 0.8 (1) 0.8 (2) 0.6 (3) 0.4 (2) (3) 0.4 0 10-1 Fig. 7. 1 10 102 0.2 10-1 103 104 IC (mA) 1 10 VCE = 5 V IC/IB = 20 (1) Tamb = -55 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values 006aad163 1 Fig. 8.
PAGE 8
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 8. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 0.53 0.40 1.5 2 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig. 11. Package outline SOT89 9. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 1.1 (2×) 1.5 solder paste occupied area Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 12.
PAGE 9
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 13. Wave soldering footprint for SOT89 10. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS4240X v.
PAGE 10
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.
PAGE 11
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PAGE 12
PBSS4240X NXP Semiconductors 40 V, 2 A NPN low VCEsat (BISS) transistor 12. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information .............................