DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jun 17 2004 Nov 08
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 50 V IC collector current (DC) 2 A • Higher efficiency leading to less heat generation ICM peak collector current 5 A • Reduced printed-circuit board requirements.
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 2 A ICM peak collector current − 5 A IB base current (DC) − 0.
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X 006aaa243 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. Fig.2 Transient thermal impedance as a function of pulse time; typical values. 006aaa244 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X 006aaa245 103 Zth(j-a) (K/W) 102 10 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. Fig.4 Transient thermal impedance as a function of pulse time; typical values.
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. MAX. UNIT VCB = 50 V; IE = 0 A − 100 nA VCB = 50 V; IE = 0 A; Tj = 150 °C − 50 μA ICES collector-emitter cut-off current VCE = 50 V; VBE = 0 V − 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − 100 nA hFE DC current gain VCE = 2 V IC = 0.
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
