DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat SYMBOL • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. PARAMETER MAX.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T MLD849 800 MLD850 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) 600 (1) 800 (1) (2) 400 (2) (3) 400 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T MLD853 103 handbook, halfpage MLD854 103 handbook, halfpage VCEsat (mV) VCEsat (mV) (1) (2) 102 102 (3) (1) 10 (2) 10 (3) 1 10−1 1 10 102 1 10−1 103 104 IC (mA) 1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T MLD857 102 handbook, halfpage RCEsat (Ω) 10 1 (1) (2) 10−1 10−2 10−1 (3) 1 10 102 103 104 IC (mΑ) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Equivalent on-resistance as a function of collector current; typical values.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
