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1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

PNP complement: PBSS5330PA.

1.2 Features and benefits

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

 Exposed heat sink for excellent thermal and electrical conductivity

 Leadless small SMD plastic package with medium power capability

1.3 Applications

 Loadswitch

 Battery-driven devices

 Power management

 Charging circuits

 Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS4330PA

30 V, 3 A NPN low V

CEsat

(BISS) transistor

Rev. 01 — 19 April 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 30 V

collector current - - 3 A

peak collector current single pulse;

≤ 1ms

--5A

CEsat

collector-emitter

saturation resistance

=3A;

=300mA

[1]

-75100mΩ

Summary of content (15 pages)

PAGE 1
PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. 1.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 2 1 sym021 2 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name PBSS4330PA Description Version HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm 4. Marking Table 4.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 006aab979 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab980 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 006aac000 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 1 0 0.02 0.01 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab982 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 006aac044 800 hFE 006aac045 5.0 IB (mA) = 25 IC (A) (1) 22.5 20 4.0 600 17.5 15 (2) 12.5 3.0 10 400 7.5 2.0 (3) 5 200 2.5 1.0 0 10−1 1 10 102 0.0 0.0 103 104 IC (mA) 0.4 0.8 1.2 1.6 2.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 6. DC current gain as a function of collector current; typical values Fig 7. 006aac046 1.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 006aac048 1 006aac049 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (1) (2) (3) (2) 10−2 10−2 (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aac050 102 Fig 11.
PAGE 9
PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 14. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 9 V; IC = 2 A; IBon = 0.1 A; IBoff = −0.1 A Fig 15.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 9. Package outline 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 16. Package outline SOT1061 (HUSON3) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint SOT1061 (HUSON3) PBSS4330PA_1 Product data sheet All information provided in this document is subject to legal disclaimers.
PAGE 12
PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4330PA_1 20100419 Product data sheet - - PBSS4330PA_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 19 April 2010 © NXP B.V. 2010. All rights reserved.
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PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
PAGE 15
PBSS4330PA NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .