DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS4350D 50 V low VCEsat NPN transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Jul 13
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage 50 V ICM peak collector current 5 A RCEsat equivalent on-resistance <145 mΩ • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. PARAMETER MAX.
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D MGW175 600 MGW176 1.2 VBE (V) 1.0 handbook, halfpage handbook, halfpage hFE 500 (1) (1) 0.8 400 (2) (2) 300 0.6 (3) 200 0.4 (3) 0.2 100 0 10 −1 1 10 102 0 10 −1 103 104 I C (mA) 1 10 102 103 104 I C (mA) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 C. (3) Tamb = 150 °C. VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.3 Fig.2 DC current gain; typical values.
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D MGW180 MGW179 1200 5 handbook, halfpage handbook, halfpage I C (mA) 1000 (2) (3) (4) (5) (1) IC (A) (1) (2) 4 (6) (7) (3) (8) (4) 800 (5) 3 (9) (6) 600 (7) (10) 2 (8) 400 (9) (10) 200 1 (11) (12) 0 0 0.4 0 0.8 1.2 VCE = 5 V. (5) IB = 2.64 nA. (6) IB = 2.31 nA. (7) IB = 1.98 nA. (8) IB = 1.65 nA. (9) IB = 1.32 nA. (10) IB = 0.99 nA. (11) IB = 0.66 nA. (12) IB = 0.33 nA. (1) IB = 150 mA.
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
NXP Semiconductors Product data sheet 50 V low VCEsat NPN transistor PBSS4350D DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
