DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current capability: IC maximum 4 A VCEO collector-emitter voltage 80 V IC collector current (DC) 4 A ICM peak collector current 10 A RCEsat equivalent on-resistance 54 mΩ • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers; e.g.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 V VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 4 − 4 A ICRM repetitive peak collector current tp ≤ 10 ms; δ ≤ 0.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa229 1600 (1) Ptot (mW) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W thermal resistance from junction in free air to ambient notes 1 and 2 Rth(j-s) thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa734 1000 hFE 001aab057 1.2 (1) VBE (V) 800 (2) 0.8 (1) 600 (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 0 10-1 103 104 IC (mA) 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 1 DC current gain as a function of collector current; typical values. Fig.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 001aaa736 1.2 001aaa738 103 RCEsat (Ω) VBEsat (V) 102 (1) 0.8 10 (2) (3) 1 0.4 10−1 (1) (2) (3) 0 10−1 1 102 10 10−2 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X Reference mounting conditions 32 mm 32 mm handbook, halfpage 10 mm 40 mm 2.5 mm 1 mm 40 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm 001aaa234 MLE322 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
