DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS4540Z 40 V low VCEsat NPN transistor Product data sheet Supersedes data of 2001 Jul 24 2001 Nov 14
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capabilities VCEO emitter-collector voltage 40 V IC collector current (DC) 5 A ICM peak collector current 10 A RCEsat equivalent on-resistance <71 mΩ • Improved device reliability due to reduced heat generation.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z MLD683 1000 MLD684 1200 BE (mV) 1000 handbook, halfpage V handbook, halfpage hFE 800 (1) 800 (1) 600 (2) 600 (2) 400 400 (3) 200 0 (3) 200 1 102 10 103 IC (mA) 0 10−1 104 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. 1 (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z MLD686 1300 VBEsat MHC106 12 IC (A) 10 handbook, halfpage (V) 1100 8 900 (1) (2) (3) (4) (5) (6) (7) 6 700 (1) (8) (9) (2) 4 500 (10) 2 (3) 300 100 10−1 0 1 10 102 103 104 IC (mA) 0 IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. 400 (3) Tamb = 150 °C. (1) IB = 70 mA. (2) IB = 63 mA. (3) IB = 56 mA. (4) IB = 49 mA. Fig.6 Fig.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.
NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
