Datasheet

1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5560PA.
1.2 Features and benefits
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
[1] Pulse test: t
p
300 μs; δ≤0.02.
PBSS4560PA
60 V, 6 A NPN low V
CEsat
(BISS) transistor
Rev. 1 — 19 May 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 60 V
I
C
collector current - - 6 A
I
CM
peak collector current single pulse;
t
p
1ms
--7A
R
CEsat
collector-emitter
saturation resistance
I
C
=6A;
I
B
=300mA
[1]
-3448mΩ

Summary of content (15 pages)