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PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

9 July 2013 Product data sheet

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1. General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a small SOT23

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Small SMD plastic package

•

Low collector-emitter saturation voltage V

CEsat

•

High collector current capability: I

and I

•

Higher efficiency due to less heat generation

•

AEC-Q101 qualified

3. Applications

•

DC-to-DC conversion

•

Supply line switching

•

Battery charger

•

LCD backlighting

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter

voltage

open base - - -30 V

collector current - - -1 A

peak collector current single pulse; t

≤ 1 ms - - -3 A

CEsat

collector-emitter

saturation resistance

= -500 mA; I

= -50 mA; pulsed;

≤ 300 µs; δ ≤ 0.02 ; T

amb

= 25 °C

- - 220 mΩ

Summary of content (11 pages)

PAGE 1
SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat (BISS) transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • Small SMD plastic package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency due to less heat generation AEC-Q101 qualified 3.
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PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol C 3 B 1 2 TO-236AB (SOT23) E sym132 6. Ordering information Table 3. Ordering information Type number PBSS5130T Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4.
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PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7.
PAGE 5
PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor aaa-006394 1000 aaa-006395 -1.0 hFE IB (mA) = -3 IC (A) 800 -2.7 -0.8 -2.4 (1) -2.1 600 -1.8 -0.6 -1.5 -1.2 (2) 400 -0.4 -0.9 -0.6 (3) 200 -0.2 -0.3 0 -10-1 -1 -10 -102 0 -103 -104 IC (mA) VCE = -2 V -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 150 °C Fig. 2. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = -55 °C Fig. 1.
PAGE 6
PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor aaa-006398 -103 aaa-006406 103 RCEsat (Ω) VCEsat (mV) 102 (1) (2) -102 (3) 10 -10 (1) (2) 1 (3) -1 -10-1 Fig. 5. -1 -10 -102 10-1 -10-1 -103 -104 IC (mA) -1 -10 IC/IB = 20 IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = -55 °C Collector-emitter saturation voltage as a function of collector current; typical values Fig. 6.
PAGE 7
PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 Fig. 8. sot023_fr Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 Fig. 9.
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PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5130T v.2 20130709 Product data sheet - PBSS5130T v.1 Modifications: • • • • • • • • • • • PBSS5130T v.1 PBSS5130T Product data sheet The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
PAGE 9
PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
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PBSS5130T NXP Semiconductors 30 V; 1 A PNP low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................