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1. Product proﬁle

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4140T.

1.2 Features

n Low collector-emitter saturation voltage V

CEsat

n High collector current capability I

and I

n High collector current gain (h

) at high I

n High efﬁciency due to less heat generation

1.3 Applications

n General-purpose switching and muting

n LCD backlighting

n Supply line switching circuits

n Battery-driven equipment (mobile phones, video cameras and handheld devices)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 µs; δ≤0.02.

PBSS5140T

40 V, 1 A PNP low V

CEsat

BISS transistor

Rev. 04 — 29 July 2008 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −40 V

collector current - - −1A

peak collector current single pulse;

≤ 1ms

--−2A

CEsat

collector-emitter

saturation resistance

= −500 mA;

= −50 mA

[1]

- 300 < 500 mΩ

Summary of content (13 pages)

PAGE 1
PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4140T. 1.2 Features n n n n Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation 1.
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PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 006aab259 3. Ordering information Table 3. Ordering information Type number PBSS5140T Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 006aab309 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab310 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.01 0.
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PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 6
PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 006aab311 1000 006aab312 −2 hFE IB (mA) = −60 IC (A) 800 −42 −54 −36 −48 −1.5 (1) −30 −24 −18 600 (2) −12 −1 −6 400 (3) −0.5 200 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −5 V −0.4 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values 006aab313 −1.2 Fig 5.
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PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 006aab315 −1 006aab316 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (3) (1) (2) −10−2 −10−2 −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) (3) −10−3 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 8.
PAGE 8
PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA Fig 13.
PAGE 9
PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 14. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 15. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 16.
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PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5140T_4 20080729 Product data sheet - PBSS5140T_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 13
PBSS5140T NXP Semiconductors 40 V, 1 A PNP low VCEsat BISS transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .