Datasheet

1. Product profile
1.1 General description
PNP/PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor pair in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.2 Features
n Low collector-emitter saturation voltage V
CEsat
n High collector current capability I
C
and I
CM
n High collector current gain (h
FE
) at high I
C
n High efficiency due to less heat generation
n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
n Dual low power switches (e.g. motors, fans)
n Automotive applications
1.4 Quick reference data
[1] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[2] Pulse test: t
p
≤ 300 µs; δ≤0.02.
PBSS5160DS
60 V, 1 A PNP/PNP low V
CEsat
(BISS) transistor
Rev. 03 — 9 October 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - −60 V
I
C
collector current
[1]
--−1A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--−2A
R
CEsat
collector-emitter saturation
resistance
I
C
= −1A;
I
B
= −100 mA
[2]
- 250 330 mΩ