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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160T.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High efficiency due to less heat generation

 Reduces Printed-Circuit Board (PCB) area required

 Cost-effective replacement for medium power transistors BCP52 and BCX52

1.3 Applications

 Major application segments:

 Automotive

 Telecom infrastructure

 Industrial

 Power management:

 DC-to-DC conversion

 Supply line switching

 Peripheral driver:

 Driver in low supply voltage applications (e.g. lamps and LEDs)

 Inductive load drivers (e.g. relays, buzzers and motors)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS5160T

60 V, 1 A PNP low V

CEsat

(BISS) transistor

Rev. 04 — 15 January 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −60 V

collector current - - −1A

peak collector current t = 1 ms or limited

by T

j(max)

--−2A

CEsat

collector-emitter

saturation resistance

= −1A;

= −100 mA

[1]

- 220 330 mΩ

Summary of content (11 pages)

PAGE 1
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T. 1.
PAGE 2
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 006aab259 3. Ordering information Table 3. Ordering information Type number PBSS5160T Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
PAGE 3
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Ptot total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 270 mW [2] - 400 mW [1][3] - 1.
PAGE 4
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 465 K/W [2] - - 312 K/W [1][3] - - 100 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 5
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 6
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor mle124 600 hFE −2 IC IB (mA) = − 20 −24 −28 −32 −36 −40 (A) mle125 −1.6 (1) −16 400 −12 −1.2 (2) −8 −0.8 200 −4 (3) −0.4 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −5 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values mle122 −1.2 Fig 4.
PAGE 7
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor mle126 −10 VCEsat mle119 −1 VCEsat (V) (V) −10−1 −1 (2) −10−1 −10−2 (1) (3) (2) (1) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 IC/IB = 20 IC/IB = 10 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7.
PAGE 8
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 9
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5160T_4 20100115 Product data sheet - PBSS5160T_N_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 11
PBSS5160T NXP Semiconductors 60 V, 1 A PNP low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .