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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface

Mounted Device (SMD) plastic package.

NPN complement: PBSS4220V.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability: I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 DC-to-DC conversion

 MOSFET gate driving

 Motor control

 Charging circuits

 Low power switches (e.g. motors, fans)

 Portable applications

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS5220V

20 V, 2 A PNP low V

CEsat

(BISS) transistor

Rev. 03 — 14 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −20 V

collector current - - −2A

peak collector current t

≤ 300 μs--−4A

CEsat

collector-emitter

saturation resistance

= −1A;

= −100 mA

[1]

- 140 210 mΩ

Summary of content (13 pages)

PAGE 1
PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4220V. 1.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 sym030 3 3. Ordering information Table 3. Ordering information Type number PBSS5220V Package Name Description Version - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature −65 +150 °C storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off current VCB = −20 V; IE = 0 A - - −0.1 μA VCB = −20 V; IE = 0 A; Tj = 150 °C - - −50 μA ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 V - - −0.1 μA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −0.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 006aaa426 1000 hFE 006aaa427 −1.0 VBE (V) 800 (1) −0.8 (1) (2) 600 (2) −0.6 (3) 400 (3) −0.4 200 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −2 V −1 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. −10 DC current gain as a function of collector current; typical values Fig 4.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 006aaa430 −1.2 VBEsat (V) 006aaa431 102 RCEsat (Ω) −1.0 (1) 10 −0.8 (2) −0.6 (3) 1 (1) (2) (3) −0.4 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 006aaa432 −2.0 −11.7 mA −10.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 11.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 9. Package outline 1.7 1.5 6 0.6 0.5 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 2 3 0.27 0.17 0.5 0.18 0.08 1 Dimensions in mm 04-11-08 Fig 13. Package outline SOT666 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint PBSS5220V_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5220V_3 20091214 Product data sheet - PBSS5220V_2 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS5220V NXP Semiconductors 20 V, 2 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .