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DATA SHEET

Product data sheet

Supersedes data of 2001 Oct 31

2004 Jan 15

DISCRETE SEMICONDUCTORS

PBSS5240T

40 V, 2 A

PNP low V

CEsat

(BISS) transistor

Summary of content (9 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2001 Oct 31 2004 Jan 15
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage −40 V IC collector current (DC) −2 A ICM peak collector current −3 A RCEsat equivalent on-resistance <220 mΩ • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistor. PARAMETER MAX.
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = −30 V; IE = 0 TYP. MAX.
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T MHC064 1000 MHC067 −1200 VBE (mV) −1000 handbook, halfpage handbook, halfpage hFE 800 (1) −800 (1) −600 (2) 600 (2) 400 −400 (3) (3) 200 −200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −2V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T MHC065 −3000 handbook, halfpage (1) (2) (3) (4) IC (mA) MHC069 103 handbook, halfpage RCEsat (Ω) (5) 102 (6) −2000 (7) (8) 10 (9) −1000 (10) 0 −1 0 (1) (2) (3) (4) IB = −23.0 mA. IB = −20.7 mA. IB = −18.4 mA. IB = −16.1 mA. Fig.6 −2 −3 (5) IB = −13.8 mA. (6) IB = −11.5 mA. (7) IB = −9.2 mA. −4 10−1 −10−1 −5 VCE (V) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C.
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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NXP Semiconductors Product data sheet 40 V, 2 A PNP low VCEsat (BISS) transistor PBSS5240T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.