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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a small

SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350D

1.2 Features and benefits

 Low collector-emitter saturation

voltage V

CEsat

 High current capability

 High efficiency due to less heat

generation

 AEC-Q101 qualified

 Smaller Printed-Circuit Board (PCB)

area than for conventional transistors

1.3 Applications

 Supply line switching circuits

 Battery management applications

 DC-to-DC conversion

1.4 Quick reference data

PBSS5350D

50 V, 3 A PNP low VCEsat (BISS) transistor

Rev. 6 — 28 June 2011 Product data sheet

SOT457

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter

voltage

open base - - -50 V

collector current - - -3 A

peak collector current - - -5 A

CEsat

collector-emitter

saturation resistance

=-2A; I

= -200 mA; pulsed;

≤ 300 µs; δ≤0.02 ; T

amb

=25°C

- 120 150 mΩ

Summary of content (12 pages)

PAGE 1
SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 C collector 2 C collector 3 B base 4 E emitter 5 C collector 6 C collector Simplified outline 6 5 Graphic symbol 4 1, 2, 5, 6 3 1 2 3 SOT457 (TSOP6) 4 sym030 3. Ordering information Table 3.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7.
PAGE 5
PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor mgw167 1000 006aac605 –1000 IB (nA) = –3.96 IC (mA) hFE –3.63 –3.30 –800 800 –2.97 –2.64 (1) –2.31 –600 600 –1.98 –1.65 (2) 400 –400 –1.32 –0.99 (3) 200 –0.66 –200 –0.33 0 −10−1 −1 −10 −102 0 0.0 −103 −104 IC (mA) VCE = -2 V –0.4 –0.8 –1.2 –1.6 –2.0 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 1.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor mgw170 −1.4 VBEsat (V) −1.2 mgw169 −103 VCEsat (mV) −1.0 −102 (1) (1) −0.8 (2) (2) (3) −0.6 −10 (3) −0.4 −0.2 −10−1 Fig 5. −1 −10 −102 −1 −10−1 −103 −104 IC (mA) −1 −10 IC/IB = 10 IC/IB = 10 (1) Tamb = -55 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = -55 °C Base-emitter saturation voltage as a function of collector current; typical values Fig 6.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 9. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 Fig 9. sot457_fr Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 10.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5350D v.6 20110628 Product data sheet - PBSS5350D v.5 Modifications: • 5 “Limiting values”: Ptot conditions updated. PBSS5350D v.5 20110323 Product data sheet - PBSS5350D v.4 PBSS5350D v.4 20011113 Product specification - PBSS5350D v.3 PBSS5350D v.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PBSS5350D NXP Semiconductors 50 V, 3 A PNP low VCEsat (BISS) transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . .