DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Jun 8 2004 Nov 08
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current IC: 4 A VCEO collector-emitter voltage −80 V IC collector current (DC) −4 A ICM peak collector current −10 A RCEsat equivalent on-resistance 75 mΩ • High efficiency leading to less heat generation. APPLICATIONS PARAMETER MAX. UNIT • Medium power peripheral drivers (e.g.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS5480X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 001aaa753 −10 (4) (3) (2) IC (A) −8 VBE (V) (5) (6) (7) −0.8 (8) −6 001aaa754 −1.2 (1) (1) (9) (2) (10) −4 (3) −0.4 −2 0 −0.4 0 (1) (2) (3) (4) IB = −300 mA. IB = −270 mA. IB = −240 mA. IB = −210 mA. Fig.6 −0.8 −1.2 (5) IB = −180 mA. (6) IB = −150 mA. (7) IB = −120 mA. 0 −10−1 −1.6 −2 VCE (V) (8) IB = −90 mA. (9) IB = −60 mA. (10) IB = −30 mA.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 001aaa757 −1 001aaa758 −1 VCEsat (V) VCEsat (V) −10−1 (1) (2) −10−1 −10−2 (3) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −10−3 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X Reference mounting conditions 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm MLE322 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
