DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Sep 21
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO emitter-collector voltage −40 V IC collector current (DC) −5 A ICM peak collector current −10 A RCEsat equivalent on-resistance <80 mΩ • Improved device reliability due to reduced heat generation.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z MGU391 1000 MGU393 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) −0.8 (1) 600 (2) 400 (2) 200 (3) −0.4 (3) 0 −1 −10 −102 −103 0 −10−1 −104 IC (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = −55 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z MGU392 −10 IC (A) handbook, halfpage (1) RCEsat (Ω) (3) (4) (5) (6) −8 MGU396 103 handbook, halfpage (2) 102 (7) (8) −6 10 (9) −4 (1) (10) (2) 1 (3) −2 0 −0.4 0 −0.8 −1.2 10−1 −10−1 −2 −1.6 VCE (V) IB = −150 mA. IB = −135 mA. IB = −120 mA. IB = −105 mA. (5) (6) (7) (8) IB = −90 mA. IB = −75 mA. IB = −60 mA. IB = −45 mA.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.
NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
