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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

NPN complement: PBSS4560PA.

1.2 Features and benefits

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

 Exposed heat sink for excellent thermal and electrical conductivity

 Leadless small SMD plastic package with medium power capability

1.3 Applications

 Loadswitch

 Battery-driven devices

 Power management

 Charging circuits

 Power switches (e.g. motors, fans)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS5560PA

60 V, 5 A PNP low V

CEsat

(BISS) transistor

Rev. 01 — 21 April 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −60 V

collector current - - −5A

peak collector current single pulse;

≤ 1ms

--−6A

CEsat

collector-emitter

saturation resistance

= −5A;

= −250 mA

[1]

-5590mΩ

Summary of content (15 pages)

PAGE 1
PBSS5560PA 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. 1.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 2 1 sym013 2 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name PBSS5560PA Description Version HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm 4. Marking Table 4.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 006aab979 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab980 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 006aab981 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab982 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 006aac080 600 hFE 006aac081 −6.0 IB (mA) = −40 IC (A) (1) −32 −24 −4.0 400 (2) −36 −28 −20 −16 −12 200 −2.0 (3) −8 −4 0 −10−1 −1 −10 −102 0.0 0.0 −103 −104 IC (mA) VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 6. DC current gain as a function of collector current; typical values 006aac082 −1.2 VBE (V) Fig 7.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 006aac084 −1 006aac085 −10 VCEsat (V) VCEsat (V) −1 −10−1 −10−1 (1) (2) (1) (2) −10−2 (3) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 10.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 14. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −9 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A Fig 15.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 9. Package outline 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 16. Package outline SOT1061 (HUSON3) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint SOT1061 (HUSON3) PBSS5560PA_1 Product data sheet All information provided in this document is subject to legal disclaimers.
PAGE 12
PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5560PA_1 20100421 Product data sheet - - PBSS5560PA_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 21 April 2010 © NXP B.V. 2010. All rights reserved.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
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PBSS5560PA NXP Semiconductors 60 V, 5 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .