DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Jul 28 2003 Dec 22
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T QUICK REFERENCE DATA FEATURES • SOT23 package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 100 V • High collector current capability: IC and ICM IC collector current (DC) 1 A • Higher efficiency leading to less heat generation ICM repetitive peak collector current 3 A RCEsat equivalent on-resistance 200 mΩ • Reduced printed-circuit board requirements
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T THERMAL CHARACTERISTICS SYMBOL Rth( j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle355 103 Zth (K/W) (1) (2) (3) 102 (4) (5) (6) δ= P (7) 10 (8) (9) (10) tp T t tp T 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) (1) δ = 1.0. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.03. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.0. Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle352 600 MLE362 1.2 handbook, halfpage VBE (V) hFE (1) (1) 400 0.8 (2) (2) (3) 200 0.4 (3) 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle357 10 MLE363 10 handbook, halfpage VCEsat (V) VBEsat (V) 1 1 (1) (2) 10−1 (3) 10−2 10−1 1 10 10−2 10−1 10−1 10−3 10−4 IC (mA) 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 50. Tamb = 25 °C. Fig.9 1 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T mle358 2 (2) IC RCEsat (3) (4) (5) (6) (A) 1.6 MLE359 103 handbook, halfpage (1) (Ω) 102 (7) 1.2 (8) 10 (9) 0.8 (10) 1 0.4 (1) 10−1 0 0 1 2 3 4 10−1 5 1 10 102 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = 3500 μA. IB = 3150 μA. IB = 2800 μA. IB = 2450 μA. (5) (6) (7) (8) IB = 2100 μA. IB = 1750 μA. IB = 1400 μA. IB = 1050 μA. Fig.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
