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1. Product profile

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/

TO-243) SMD plastic package.

PNP complement: PBSS9110X.

1.2 Features

 SOT89 package

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability: I

and I

 High efficiency leading to less heat generation

1.3 Applications

 Major application segments:

 Automotive 42 V power

 Telecom infrastructure

 Industrial

 Peripheral driver:

 Driver in low supply voltage applications (e.g. lamps and LEDs)

 Inductive load driver (e.g. relays, buzzers and motors)

 DC-to-DC converter

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ ≤ 0.02.

PBSS8110X

100 V, 1 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 11 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 100 V

collector current (DC) - - 1 A

peak collector current single pulse;

≤ 1ms

--3 A

CEsat

collector-emitter

saturation resistance

=1A;

=100mA

[1]

- 165 200 mΩ

Summary of content (15 pages)

PAGE 1
PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation 1.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Symbol 2 3 3 2 1 1 sym042 3. Ordering information Table 3. Ordering information Type number PBSS8110X Package Name Description Version SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 227 K/W [2] - - 89 K/W [3] - - 63 K/W - - 16 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 006aaa411 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB; mounting pad for collector 6cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 102 Zth(j-a) (K/W) 006aaa410 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa497 600 001aaa495 1000 VBE (mV) hFE (1) 800 (1) 400 (2) (2) 600 (3) 200 (3) 400 0 10−1 1 102 10 103 104 IC (mA) 200 10−1 VCE = 10 V 1 102 103 104 IC (mA) VCE = 10 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. 10 (3) Tamb = 100 °C DC current gain as a function of collector current; typical values 001aaa504 1 Fig 6.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa506 104 001aaa498 1200 VBEsat (mV) VCEsat (mV) 1000 (1) 103 800 (2) (3) 600 102 400 10 10−1 1 10 102 103 104 IC (mA) 200 10−1 IC/IB = 50; Tamb = 25 °C 1 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa499 1200 Fig 10.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa502 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 10−1 10−1 1 10 102 001aaa503 103 10−1 10−1 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C 1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values Fig 14.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 16. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A Fig 17.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 18. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 12
PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 Dimensions in mm 0.50 1.20 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 Reflow soldering is the only recommended soldering method Fig 19. Reflow soldering footprint SOT89 (SC-62/TO-243) 12. Mounting 32 mm 30 mm 32 mm 40 mm 2.5 mm 20 mm 40 mm 1 mm 3 mm 2.5 mm 2.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS8110X_2 20091211 Product data sheet - PBSS8110X_1 Modifications: PBSS8110X_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS8110X NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .