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1. Product profile

1.1 General description

NPN low V

CEsat

transistor in a SOT363 (SC-88) plastic package.

1.2 Features

 SOT363 package

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High efficiency reduces heat generation

1.3 Applications

 Major application segments:

 Automotive 42 V power

 Telecom infrastructure

 Industrial

 Peripheral driver:

 Driver in low supply voltage applications (e.g. lamps and LEDs)

 Inductive load driver (e.g. relays, buzzers and motors)

 DC-to-DC converter

1.4 Quick reference data

PBSS8110Y

100 V, 1 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 21 November 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage - - 100 V

collector current (DC) - - 1 A

peak collector current - - 3 A

CEsat

equivalent on-resistance - - 200 mΩ

Summary of content (13 pages)

PAGE 1
PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Discrete pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 3 sym014 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS8110Y - plastic surface mounted package; 6 leads SOT363 4. Marking Table 4.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature +150 °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa798 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values PBSS8110Y_2 Product data sheet © NXP B.V. 2009.
PAGE 5
PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa797 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Mounted on FR4 PCB; mounting pad for collector = 1cm2 (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 3. Transient thermal impedance as a function of pulse time; typical values 7. Characteristics Table 7.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa504 1 001aaa505 103 VCEsat (V) VCEsat (mV) 10−1 102 (1) (2) (3) 10−2 10−1 1 10 102 10 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa506 104 Fig 7.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa499 1200 VBEsat (mV) 001aaa500 1000 VBEsat (mV) 1000 800 800 600 600 400 10−1 1 102 10 103 104 IC (mA) 400 10−1 IC/IB = 20; Tamb = 25 °C 001aaa496 2 IB (mA) = 35 31.5 28 24.5 21 17.5 14 1.6 1.2 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C Fig 10. Base-emitter saturation voltage as a function of collector current; typical values IC (A) 1 Fig 11.
PAGE 9
PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa502 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C 001aaa503 103 10−1 10−1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C Fig 14. Equivalent on-resistance as a function of collector current; typical values Fig 15. Equivalent on-resistance as a function of collector current; typical values PBSS8110Y_2 Product data sheet 1 © NXP B.V. 2009.
PAGE 10
PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS8110Y_2 20091121 Product data - PBSS8110Y_1 Modifications: PBSS8110Y_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS8110Y NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information .