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1. Product proﬁle

1.1 General description

NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS9110Z.

1.2 Features

n Low collector-emitter saturation voltage V

CEsat

n High collector current capability I

and I

n High collector current gain (h

) at high I

n High efﬁciency due to less heat generation

n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

n High-voltage DC-to-DC conversion

n High-voltage MOSFET gate driving

n High-voltage motor control

n High-voltage power switches (e.g. motors, fans)

n Automotive applications

1.4 Quick reference data

[1] Pulse test: t

≤ 300 µs; δ≤0.02.

PBSS8110Z

100 V, 1 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 8 January 2007 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 100 V

collector current - - 1 A

peak collector current single pulse;

≤ 1ms

--3 A

CEsat

collector-emitter

saturation resistance

=1A;

= 100 mA

[1]

- 160 200 mΩ

Summary of content (14 pages)

PAGE 1
PBSS8110Z 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 8 January 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110Z. 1.
PAGE 2
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Symbol 4 2, 4 1 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number PBSS8110Z Package Name Description SC-73 plastic surface-mounted package with increased heat sink; SOT223 4 leads Version 4. Marking Table 4.
PAGE 3
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 4
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 006aaa819 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa820 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.75 0.33 0.2 10 0.1 0.05 0.02 0.
PAGE 5
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 006aaa821 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS8110Z_2 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
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PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 7
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa497 600 001aaa496 2 IB (mA) = 35 31.5 28 24.5 21 17.5 14 IC (A) hFE 1.6 (1) 400 1.2 10.5 (2) 7 0.8 200 3.5 (3) 0.4 0 10−1 1 10 102 103 104 IC (mA) 0 0 1 2 3 4 5 VCE (V) Tamb = 25 °C VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa986 1.2 VBE (V) 006aaa987 10 VBEsat (V) (1) 0.8 Fig 6.
PAGE 8
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa504 1 006aaa988 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (1) (2) (3) 10−2 10−1 1 10 (2) 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa501 103 Fig 10.
PAGE 9
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A Fig 14.
PAGE 10
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 11. Soldering 7.00 3.85 3.60 3.50 0.30 1.20 (4 ×) 4 7.40 3.90 4.80 7.65 1 2 3 1.20 (3 ×) 1.30 (3 ×) 5.90 6.15 solder lands occupied area solder paste solder resist Dimensions in mm sot223_fr Fig 16. Reflow soldering footprint SOT223 (SC-73) 8.90 6.70 4 4.30 8.10 8.70 1 1.90 (2×) 2 3 1.10 7.30 transport direction during soldering solder lands occupied area solder resist Dimensions in mm sot223_fw Fig 17.
PAGE 12
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS8110Z_2 20070108 Product data sheet - PBSS8110Z_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate.
PAGE 13
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS8110Z NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .