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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS8110D.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 High-voltage DC-to-DC conversion

 High-voltage MOSFET gate driving

 High-voltage motor control

 High-voltage power switches (e.g. motors, fans)

 Automotive applications

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS9110D

100 V, 1 A PNP low V

CEsat

(BISS) transistor

Rev. 03 — 22 November 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −100 V

collector current - - −1A

peak collector current single pulse;

≤ 1ms

--−3A

CEsat

collector-emitter

saturation resistance

= −1A;

= −100 mA

[1]

- 170 320 mΩ

Summary of content (13 pages)

PAGE 1
PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D. 1.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 4 1, 2, 5, 6 3 1 2 3 4 sym030 3. Ordering information Table 3. Ordering information Type number PBSS9110D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS9110D A7 5.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 001aaa818 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 001aaa819 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 001aaa376 600 IB (mA) = −45 IC −40.5 (A) −36 −1.6 −31.5 −27 (1) hFE 001aaa384 −2 400 (2) −1.2 −22.5 −18 −13.5 −9 −4.5 −0.8 (3) 200 −0.4 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −10 V −1 −2 −3 −4 VCE (V) −5 Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 4. DC current gain as a function of collector current; typical values 001aaa377 −1.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 001aaa378 −1 001aaa380 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa382 103 Fig 9.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A Fig 13.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 14. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 15. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 16. Wave soldering footprint SOT457 (SC-74) PBSS9110D_3 Product data sheet © NXP B.V. 2009. All rights reserved.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS9110D_3 20091122 Product data sheet - PBSS9110D_2 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS9110D NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .