DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 May 06 2004 May 13
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T FEATURES QUICK REFERENCE DATA • SOT23 package SYMBOL • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage −100 V IC collector current (DC) −1 A • Higher efficiency leading to less heat generation ICM repetitive peak collector current −3 A APPLICATIONS RCEsat equivalent on-resistance 320 mΩ • High collector current capability: IC and ICM PARAMETER MAX.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa813 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa376 600 (1) hFE 001aaa377 −1.2 VBE (V) (1) −0.8 400 (2) (2) (3) −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) VCE = −10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Base-emitter voltage as a function of collector current; typical values.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa381 −10 001aaa379 −10 VBEsat (V) VBEsat (V) −1 −1 (1) (2) (3) −10−1 −10−1 −1 −10 −102 −10−1 −10−1 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.9 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. Tamb = 25 °C. Base-emitter saturation voltage as a function of collector current; typical values. Fig.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa384 −2 IB (mA) = −45 IC −40.5 (A) −36 −1.6 −31.5 −27 −1.2 −22.5 −18 −13.5 −9 −4.5 −0.8 −0.4 0 0 −1 −2 −3 −4 VCE (V) −5 Tamb = 25 °C. (1) (2) (3) (4) IB = 45 mA. IB = 40.5 mA. IB = 36 mA. IB = 31.5 mA. (5) (6) (7) (8) IB = 27 mA. IB = 22.5 mA. IB = 18 mA. IB = 13.5 mA. (9) IB = 9 mA. (10) IB = 4.5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
