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1. Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD)

plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PDTC124E series

NPN resistor-equipped transistors;

R1 = 22 k, R2 = 22 k

Rev. 8 — 28 November 2011 Product data sheet

Table 1. Product overview

Type number Package PNP

complement

Package

configuration

NXP JEITA JEDEC

PDTC124EE SOT416 SC-75 - PDTA124EE ultra small

PDTC124EM SOT883 SC-101 - PDTA124EM leadless ultra small

PDTC124ET SOT23 - TO-236AB PDTA124ET small

PDTC124EU SOT323 SC-70 - PDTA124EU very small

 100 mA output current capability  Reduces component count

 Built-in bias resistors  Reduces pick and place costs

 Simplifies circuit design  AEC-Q101 qualified

 Digital applications in automotive and

industrial segments

 Cost-saving alternative for BC847/857

series in digital applications

 Control of IC inputs  Switching loads

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 50 V

output current - - 100 mA

R1 bias resistor 1 (input) 15.4 22 28.6 k

R2/R1 bias resistor ratio 0.8 1 1.2

Summary of content (17 pages)

PAGE 1
PDTC124E series NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k Rev. 8 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Table 1.
PAGE 2
PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT23; SOT323; SOT416 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym007 SOT883 1 input (base) 2 GND (emitter) 3 1 3 3 2 output (collector) R1 1 Transparent top view R2 2 sym007 3. Ordering information Table 4.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac778 300 Ptot (mW) (1) (2) 200 (3) 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT23; FR4 PCB, standard footprint SOT883; FR4 PCB with 70 m copper strip line, standard footprint (2) SOT323; FR4 PCB, standard footprint (3) SOT416; FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac781 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC124EE (SOT416); typical values 006aac782 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac779 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC124ET (SOT23); typical values 006aac780 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac794 103 hFE 006aac795 1 (1) VCEsat (V) (2) (3) 102 10-1 (1) (2) (3) 10 1 10-1 1 102 10 10-2 10-1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 6. DC current gain as a function of collector current; typical values Fig 7.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac798 3 Cc (pF) 006aac757 103 fT (MHz) 2 102 1 0 0 10 20 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C 10 10-1 1 102 10 IC (mA) VCE = 5 V; Tamb = 25 C Fig 10. Collector capacitance as a function of collector-base voltage; typical values Fig 11. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 9. Package outline 0.62 0.55 0.55 0.47 0.95 0.60 1.8 1.4 3 0.45 0.15 0.50 0.46 3 0.30 0.22 1.75 0.9 1.45 0.7 1.02 0.95 0.65 1 0.30 0.22 2 0.30 0.15 0.25 0.10 2 1 0.20 0.12 1 0.35 Dimensions in mm 04-11-04 Fig 12. Package outline PDTC124EE (SOT416/SC-75) 3.0 2.8 Dimensions in mm 03-04-03 Fig 13. Package outline PDTC124EM (SOT883/SC-101) 1.1 0.9 2.2 1.8 1.1 0.8 0.45 0.15 3 3 0.45 0.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 11. Soldering 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PDTC124EE (SOT416/SC-75) 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint PDTC124ET (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19.
PAGE 13
PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 20. Reflow soldering footprint PDTC124EU (SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 21.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTC124E_SER v.8 20111128 Product data sheet - PDTC124E_SERIES v.7 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 16
PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14.
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PDTC124E series NXP Semiconductors NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . .