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1. Product profile

1.1 General description

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PEMB9; PUMB9

PNP/PNP resistor-equipped transistors;

R1 = 10 k, R2 = 47 k

Rev. 3 — 22 November 2011 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement

NPN/NPN

complement

Package

configuration

NXP JEITA

PEMB9 SOT666 - PEMD9 PEMH9 ultra small and flat

lead

PUMB9 SOT363 SC-88 PUMD9 PUMH9 very small

 100 mA output current capability  Reduces component count

 Built-in bias resistors  Reduces pick and place costs

 Simplifies circuit design  AEC-Q101 qualified

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

CEO

collector-emitter voltage open base - - 50 V

output current - - 100 mA

R1 bias resistor 1 (input) 7 10 13 k

R2/R1 bias resistor ratio 3.7 4.7 5.7

Summary of content (14 pages)

PAGE 1
PEMB9; PUMB9 PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Rev. 3 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP PEMB9 SOT666 PUMB9 SOT363 JEITA NPN/PNP complement NPN/NPN complement Package configuration - PEMD9 PEMH9 ultra small and flat lead SC-88 PUMD9 PUMH9 very small 1.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Graphic symbol 6 5 4 R1 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 006aaa212 3. Ordering information Table 4.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac749 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666 6. Thermal characteristics Table 7.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac751 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMB9 (SOT666); typical values 006aac750 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac789 103 hFE 006aac790 -1 (1) (2) VCEsat (V) (3) 102 -10-1 (1) (2) 10 (3) 1 -10-1 -1 -102 -10 -10-2 -10-1 -1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 4. -102 -10 IC (mA) DC current gain as a function of collector current; typical values Fig 5.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 006aac793 7 006aac763 103 Cc (pF) 6 fT (MHz) 5 4 102 3 2 1 0 0 -10 -20 -30 10 -10-1 -40 -50 VCB (V) -102 -10 IC (mA) f = 1 MHz; Tamb = 25 C Fig 8. -1 VCE = 5 V; Tamb = 25 C Collector capacitance as a function of collector-base voltage; typical values Fig 9. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.
PAGE 9
PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 13. Reflow soldering footprint PUMB9 (SOT363) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 14.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMB9_PUMB9 v.3 20111122 Product data sheet - PEMB9_PUMB9 v.2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 13
PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.
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PEMB9; PUMB9 NXP Semiconductors PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . .