Datasheet

PH2925U
N-channel TrenchMOS ultra low level FET
Rev. 04 — 24 February 2009 Product data sheet
1. Product profile
1.1 General description
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Interfaces directly with low voltage
gate drivers
 Low conduction losses due to low
on-state resistance
1.3 Applications
 DC-to-DC convertors
 Notebook computers
 Portable equipment
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 150 °C - - 25 V
I
D
drain current T
mb
=25°C; V
GS
=4.5V;
see Figure 1
; see Figure 3
- - 100 A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 62.5 W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 4.5 V; I
D
=50A;
V
DS
=10V; T
j
=25°C;
see Figure 10; see Figure 11
- 20.2 - nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 4.5 V; I
D
=25A;
T
j
= 25 °C; see Figure 8;
see Figure 9
-2.33mΩ