Datasheet

Philips Semiconductors
PHP/PHB191NQ06LT
N-channel TrenchMOS™ logic level FET
Product data Rev. 01 — 05 May 2004 3 of 13
9397 750 13168
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
T
mb
=25°C; I
DM
is single pulse; V
GS
=10V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
P
der
(%)
03aq99
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
I
der
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%×= I
der
I
D
I
D25C
°
()
-------------------
100%×=
03ar01
1
10
10
2
10
3
1 10 10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
µ
s
100 µs