Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPHB20N06T,118, MOSFET

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Rev. 01 — 22 February 2001 Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

technology.

Product availability:

PHP20N06T in SOT78 (TO-220AB)

PHB20N06T in SOT404 (D

-PAK).

2. Features

■ Very low on-state resistance

■ Fast switching.

3. Applications

■ Switched mode power supplies

■ DC to DC converters.

4. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

1. TrenchMOS is a trademark of Royal Philips Electronics.

Table 1: Pinning - SOT78, SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB) SOT404 (D

-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base;

connected to drain (d)

MBK106

MBK116

MBB076

Summary of content (15 pages)

PAGE 1
PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features ■ Very low on-state resistance ■ Fast switching. 3. Applications ■ Switched mode power supplies ■ DC to DC converters. c 4.
PAGE 2
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Tj = 25 to 175 oC Typ Max Unit − 55 V VDS drain-source voltage (DC) ID drain current (DC) Tmb = 25 °C; VGS = 10 V − 20.
PAGE 3
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 03aa24 03aa16 120 Pder 120 Ider (%) (%) 100 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 200 0 Tmb (oC) 25 50 75 100 125 150 175 200 Tmb (oC) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2.
PAGE 4
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W mounted on printed circuit board; minimum footprint; SOT404 package 50 K/W Figure 4 2.4 K/W Rth(j-mb) thermal resistance from junction to mounting base 7.
PAGE 5
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 55 − − V Tj = −55 °C 50 − − V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 − − V Tj = −55 °C − − 4.4 V Tj = 25 °C − 0.
PAGE 6
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 − 0.85 1.
PAGE 7
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 03aa32 5 VGS(th) 4.5 4 (V) 03aa35 10-1 ID (A) max. 10-2 3.5 3 10-3 typ. 2.5 min 2 typ max 10-4 min 1.5 1 10-5 0.5 0 10-6 -60 -20 20 60 100 140 Tj (oC) 180 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
PAGE 8
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 003aaa049 25 ID (A) 003aaa050 10 VGS (V) 20 VDD = 44 V 8 VDD = 14 V 15 6 10 4 Tj = 175 oC 5 2 Tj = 25 oC 0 0 2 4 6 0 8 10 VGS (V) 0 5 10 15 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values.
PAGE 9
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.
PAGE 10
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 11
PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 10. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 MSD057 occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07894 Product specification Rev.
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Philips Semiconductors PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor 11. Revision history Table 6: Revision history Rev Date 01 20010222 CPCN Description - Product specification; initial version © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07894 Product specification Rev.
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PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor 12. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
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PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax.
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PHP20N06T; PHB20N06T Philips Semiconductors N-channel TrenchMOS™ transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . .