Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPHB66NQ03LT,118, MOSFET

1. Product proﬁle

1.1 General description

Logic level N-channel enhancement mode ﬁeld effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make a connection to pin 2 of the SOT404 and SOT428 packages.

PHB/PHD66NQ03LT

N-channel TrenchMOS™ logic level FET

Rev. 06 — 2 August 2004 Product data sheet

■ Logic level threshold ■ Low on-state resistance.

■ DC-to-DC converters ■ General purpose switching.

■ V

≤ 25 V ■ I

≤ 66 A

■ R

DSon

≤ 10.5 mΩ ■ Q

= 3.6 nC (typ).

Table 1: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT404 (D

-PAK)

SOT428 (D-PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base;

connected to drain (d)

Top view

mbb076

Summary of content (13 pages)

PAGE 1
PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Rev. 06 — 2 August 2004 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Logic level threshold ■ Low on-state resistance. 1.3 Applications ■ DC-to-DC converters ■ General purpose switching. 1.4 Quick reference data ■ VDS ≤ 25 V ■ RDSon ≤ 10.5 mΩ ■ ID ≤ 66 A ■ Qgd = 3.6 nC (typ). 2.
PAGE 2
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PHB66NQ03LT D2-PAK Plastic single-ended surface mounted package (Philips version of 3 leads (one lead cropped) D2-PAK); SOT404 PHD66NQ03LT D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 4.
PAGE 3
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 03aa16 120 03aa24 120 Ider Pder (%) (%) 80 80 40 40 0 0 0 50 100 150 Tmb (°C) 200 P tot P der = ----------------------- × 100% P ° 0 50 100 150 200 Tmb (°C) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature.
PAGE 4
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Figure 4 - - 1.
PAGE 5
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 25 - - V Tj = −55 °C 22 - - V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.
PAGE 6
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 03ag20 80 Tj = 25 °C ID (A) 10 V 6 V 5 V 03ag21 25 RDSon (mΩ) 4.5 V Tj = 25 °C VGS = 4.5 V 20 60 4V 15 5V 40 6V 10 10 V 3.5 V 20 5 VGS = 3 V 0 0 0 0.5 1 1.5 VDS (V) 2 0 Tj = 25 °C 20 40 60 ID (A) 80 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of drain current; typical values.
PAGE 7
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 03aa33 2.5 VGS(th) (V) 2 1.5 03aa36 10-1 ID (A) max 10-2 typ 10-3 min 10-5 0.5 0 -60 max 10-4 min 1 typ 10-6 0 60 120 Tj (°C) 0 180 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
PAGE 8
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 03ag23 80 03ag24 104 VGS = 0 V IS (A) C (pF) 60 103 40 Ciss Coss 20 175 °C Tj = 25 °C Crss 0 0 0.3 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 175 °C; VGS = 0 V 102 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13.
PAGE 9
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 7. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 10
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 E1 mounting base D1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1(1) A2 b b1 b2 c D D1 min. E mm 2.38 2.22 0.65 0.45 0.93 0.73 0.89 0.71 1.1 0.9 5.46 5.26 0.4 0.2 6.22 5.98 4.0 6.73 6.
PAGE 11
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 8. Revision history Table 6: Revision history Document ID Release date PHB_PHD66NQ03LT_6 20040802 Product data sheet Modifications: • • Data sheet Change status notice - Document number Supersedes 9397 750 13429 PHP_PHB_PHD66NQ03LT_5 Removal of PHP66NQ03LT (now in separate data sheet) Data sheet updated to latest standard.
PAGE 12
PHB/PHD66NQ03LT Philips Semiconductors N-channel TrenchMOS™ logic level FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 13
Philips Semiconductors PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . .