DISCRETE SEMICONDUCTORS DATA SHEET PHC21025 Complementary enhancement mode MOS transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 FEATURES PINNING - SOT96-1 (SO8) • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 s1 source 1 • Very low on-resistance. 2 g1 gate 1 3 s2 source 2 APPLICATIONS 4 g2 gate 2 • Motor and actuator driver 5 d2 drain 2 • Power management 6 d2 drain 2 • Synchronized rectification.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per channel VDS drain-source voltage (DC) − 30 V − −30 V − ±20 V N-channel − 3.5 A P-channel − −2.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MLB836 2.5 MLB833 - 1 2 10 handbook, halfpage handbook, halfpage P tot ID (A) (W) 2.0 (1) 10 tp = 10 µs 1.5 1 1 ms 1.0 tp δ= T P 10 0.5 1 DC 0.1 s t tp T 0 50 0 100 150 10 200 o 2 10 T s ( C) 1 1 10 V DS δ = 0.01. Ts = 80 °C. (1) RDSon limitation. Fig.2 Power derating curve. Fig.3 SOAR; N-channel.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER VALUE UNIT 35 K/W thermal resistance from junction to soldering point CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors SYMBOL Crss QG QGS QGD PHC21025 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT reverse transfer capacitance N-channel VGS = 0; VDS = 20 V; f = 1 MHz − 50 − pF P-channel VGS = 0; VDS = −20 V; f = 1 MHz − 50 − pF N-channel VGS = 10 V; VDS = 15 V; ID = 2.3 A − 10 30 nC P-channel VGS = −10 V; VDS = −15 V; ID = −2.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE137 MBE144 600 600 handbook, halfpage handbook, halfpage C (pF) C (pF) 400 400 C iss C iss 200 200 Coss Coss C rss C rss 0 0 0 10 20 V DS (V) 0 30 10 VGS = 0. Tj = 25 °C. VGS = 0. Tj = 25 °C. Fig.5 Fig.6 Capacitance as a function of drain-source voltage; N-channel; typical values.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE141 MBE157 16 10 handbook, halfpage handbook, halfpage ID (A) ID (A) 8 12 6 8 4 4 2 0 0 0 2 4 6 V 8 GS (V) 0 2 4 6 V GS (V) 8 VDS = 10 V. Tj = 25 °C. VDS = −10 V. Tj = 25 °C. Fig.9 Fig.10 Transfer characteristic; typical values; P-channel. Transfer characteristic; typical values; N-channel.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE159 6 MBE158 6 handbook, halfpage handbook, halfpage IS (A) IS (A) 4 4 (1) (2) (1) (3) (2) (3) 2 2 0 0 0 0.5 1 V SD (V) 0 1.5 0.5 1 1.5 2 V SD (V) VGD = 0. (1) Tj = 150 °C. (2) Tj = 25 °C. (3) Tj = −55 °C. VGD = 0. (1) Tj = 150 °C. (2) Tj = 25 °C. (3) Tj = −55 °C. Fig.13 Source current as a function of source-drain diode forward voltage; N-channel. Fig.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE139 1.8 MBE138 1.2 handbook, halfpage handbook, halfpage k k 1.6 1.1 (1) 1.4 1.0 (2) 1.2 0.9 1.0 0.8 0.8 0.7 0.6 0.6 50 0 50 100 50 150 o T j ( C) 0 R DSon at T j k = ---------------------------------------R DSon at 25 °C V GSth at T j k = ------------------------------------V GSth at 25°C 50 100 o 150 T j ( C) Typical VGSth at ID = 1 mA; VDS =VGS = VGSth.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE152 10 2 R th j-s (K/W) δ= 0.75 10 0.33 0.5 0.2 0.1 0.05 1 0.02 tp δ= T P 0.01 0 t tp T 10 1 10 6 10 5 10 4 10 3 10 2 10 1 t p (s) 1 Fig.20 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 NOTES 1997 Jun 20 14
Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 NOTES 1997 Jun 20 15
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