Datasheet

1. Product profile
1.1 General description
One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package. This product is designed and qualified for use in computing,
communications, consumer and industrial applications only.
1.2 Features and benefits
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High-speed line drivers
Line transformer drivers
Relay drivers
Universal line interface in telephone
sets
1.4 Quick reference data
PHC2300
Complementary enhancement mode MOS transistors
Rev. 05 — 24 February 2011 Product data sheet
SO8
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
25 °C; T
j
150 °C;
N-channel
--300V
T
j
25 °C; T
j
150 °C;
P-channel
---300V
I
D
drain current T
sp
= 80 °C; N-channel
[1]
--340mA
T
sp
= 80 °C; P-channel
[1]
---235mA
P
tot
total power
dissipation
T
sp
=8C
[2]
--1.6W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=170mA;
T
j
= 25 °C; N-channel
--6
V
GS
=-10V; I
D
=-115mA;
T
j
= 25 °C; P-channel
--17

Summary of content (14 pages)