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DATA SHEET

Product specification February 1999

DISCRETE SEMICONDUCTORS

PHE13007

Silicon Diffused Power Transistor

Summary of content (9 pages)

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DISCRETE SEMICONDUCTORS DATA SHEET PHE13007 Silicon Diffused Power Transistor Product specification February 1999
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NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICES ICES Collector cut-off current 1 IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VCEsat VCEsat Collector-emitter saturation voltage VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A;IB = 0.4 A IC = 5.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. VCC IC / mA LC 250 IBon 100 LB T.U.T. 10 0 -VBB min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. VCC Fig.5. Test circuit inductive load.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor 120 PHE13007 Normalised Power Derating PD% VCEsat/V 110 2.0 100 90 1.6 80 IC=1A 70 2A 3A 4A 1.2 60 50 0.8 40 30 0.4 20 10 0 0 20 40 60 80 Tmb / C 100 120 0.0 0.01 140 0.10 1.00 10.00 IB/A Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. VBESAT/V 1.4 HFE 50 1.3 30 Tj=100C 1.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor 10 PHE13007 IC/A 11 Zth / (K/W) 10 9 8 1 7 D= 0.5 6 0.1 0.2 0.1 0.05 0.02 0 5 tp PD D= 4 T -3V 3 t T 0.01 1E-06 -5V tp 2 -1V 1 1E-04 1E-02 t/s 1E+00 0 0 Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 100 200 300 400 500 VCEclamp/V 600 700 800 Fig.15. Reverse bias safe operating area (Tj < Tjmax) for -VBE = 5V,3V & 1V. VCC LC IBon -VBB VCL LB T.U.T. Fig.14.
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NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.16. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 6 Rev 1.
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NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Legal information NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s).