Datasheet

PHP29N08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 March 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 High noise immunity due to high gate
threshold voltage
 Low conduction losses due to low
on-state resistance
1.3 Applications
 Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 75 V
I
D
drain current T
mb
=25°C; V
GS
=11V;
see Figure 1
; see Figure 3
--27A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --88W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=29A;
V
DS
=60V; T
j
=25°C;
see Figure 11
-9-nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=11V; I
D
=14A;
T
j
= 175 °C; see Figure 9;
see Figure 10
- 96 120 mΩ
V
GS
=11V; I
D
=14A;
T
j
= 25 °C; see Figure 9;
see Figure 10
- 4050mΩ