Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPHP9NQ20T,127, MOSFET

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

 Higher operating power due to low

thermal resistance

 Low conduction losses due to low

on-state resistance

 Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

 DC-to-DC converters

 General purpose switching

 Motor control circuits

 Off-line switched-mode power

supplies

 TV and computer monitor power

supplies

1.4 Quick reference data

PHP9NQ20T

N-channel TrenchMOS standard level FET

Rev. 03 — 16 December 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 175 °C - - 200 V

drain current T

=25°C; V

=10V --8.7A

tot

total power dissipation T

=25°C --88W

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=4.5A;

=25°C

-300400mΩ

Dynamic characteristics

gate-drain charge V

=10V; I

=9A;

=160V; T

=25°C

-12-nC

Summary of content (13 pages)

PAGE 1
PHP9NQ20T N-channel TrenchMOS standard level FET Rev. 03 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Simplified outline Graphic symbol mb D G mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 200 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 200 V VGS gate-source voltage ID drain current -30 30 V VGS = 10 V; Tmb = 100 °C - 6.2 A VGS = 10 V; Tmb = 25 °C - 8.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 003aae676 103 IDM (A) RDS(on) = VDS / ID tp = 10 μs 102 lAS (A) 100 μs D.C. 003aae688 10 25 °C Tj prior to avalanche = 150 °C 1 1 ms 10 10 ms 100 ms 1 1 10 102 103 10−1 10−3 10−2 10−1 VDS (V) unclamped inductive load Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHP9NQ20T Product data sheet 10 tAV (ms) Tmb = 25 °C; IDM is single pulse Fig 3. 1 Fig 4.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit - - 1.7 K/W - 60 - K/W 003aae677 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10−1 δ= P 0.1 0.05 tp T 0.02 single pulse 10−2 10−6 Fig 5.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 200 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 178 - - V 1 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C - - 6 V VDS = 200 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 200 V; VGS = 0 V; Tj = 25 °C - 0.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 003aae678 10 lD (A) 8 VGS (V) = 10 8 003aae679 0.5 4.5 RDS(on) (Ω) 6 5 0.4 5.5 6 0.3 5.5 4 5 6 0.2 2 4.5 8 0.1 0 0 0.4 0.8 1.2 1.6 2 VDS (V) 0 4 6 8 10 ID (A) Tj = 25 °C Fig 6. 2 VGS (V) = 10 Tj = 25 °C Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 003aae684 10−1 lD (A) 10−2 003aae685 104 C (pF) Ciss 103 10−3 minimum 10−4 typical maximum Coss 102 10−5 Crss 10−6 0 1 2 3 4 5 10 10−1 1 102 10 VDS (V) VGS (V) Tj = 25 °C; VDS = VGS VGS = 0 V; f = 1 MHz Fig 12. Sub-threshold drain current as a function of gate-source voltage 003aae686 16 VGS (V) 12 VDD = 40 V 8 Fig 13.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.
PAGE 10
PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PHP9NQ20T v.3 20101216 Product data sheet - PHB_PHD_PHP9NQ20T v.2 Modifications: PHB_PHD_PHP9NQ20T v.2 PHP9NQ20T Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PHP9NQ20T NXP Semiconductors N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . .