Datasheet

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PHPT60603PY
60 V, 3 A PNP high power bipolar transistor
13 January 2014 Product data sheet
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1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT60603NY.
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - -60 V
I
C
collector current - - -3 A
I
CM
peak collector current t
p
≤ 1 ms; pulsed - - -8 A
R
CEsat
collector-emitter
saturation resistance
I
C
= -3 A; I
B
= -300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 80 120

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