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PHPT61003PY

100 V, 3A PNP high power bipolar transistor

13 January 2014 Product data sheet

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1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT61003NY

2. Features and benefits

•

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

•

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

•

High energy efficiency due to less heat generation

•

AEC-Q101 qualified

3. Applications

•

Power management

•

Loadswitch

•

Linear mode voltage regulator

•

Backlighting applications

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter

voltage

open base - - -100 V

collector current - - -3 A

peak collector current t

≤ 1 ms; single pulse - - -8 A

CEsat

collector-emitter

saturation resistance

= -2 A; I

= -200 mA; pulsed;

≤ 300 µs; δ ≤ 0.02 ; T

amb

= 25 °C

- 110 180 mΩ

Summary of content (15 pages)

PAGE 1
LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY 2.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E sym132 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -100 V VCEO collector-emitter voltage open base - -100 V VEBO emitter-base voltage open collector - -8 V IC collector current - -3 A ICM peak collector current - -8 A IB base current - -0.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 9. Thermal characteristics Table 6.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor aaa-010428 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 10 0.33 0.5 0.2 0.1 0.05 1 0.01 10-2 10-5 0.02 0.25 0 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61003PY Product data sheet All information provided in this document is subject to legal disclaimers.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 10. Characteristics Table 7.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor Symbol Parameter Conditions Min Typ Max Unit Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; - 30 - pF f = 1 MHz; Tamb = 25 °C aaa-010858 500 hFE aaa-010859 2.5 IC (A) (1) 400 IB = -50 mA -45 -40 -35 2.0 -30 -25 -20 (2) 300 1.5 -15 -10 200 1.0 (3) 100 0 -10-1 0.5 -1 -10 -102 0 -103 -103 IC (mA) VCE = −10 V 0 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor aaa-010862 -10 aaa-010863 -10 VCEsat (V) VCEsat (V) -1 -1 (1) (2) -10-1 -10-1 (1) (3) (2) -10-2 -10-3 -10-1 Fig. 8.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 13. Test circuit for switching times 11.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT61003PY v.1 20140113 Product data sheet - - PHPT61003PY Product data sheet All information provided in this document is subject to legal disclaimers. 13 January 2014 © NXP N.V. 2014.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
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PHPT61003PY NXP Semiconductors 100 V, 3A PNP high power bipolar transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information .........................