DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. = drain 2 = source 3 = gate d g PINNING 1 3 handbook, halfpage 1 s 2 Top view MAM385 Note 1. Drain and source are interchangeable.
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 40 V Drain-gate voltage VDGO max. 40 V Gate-source voltage VGSO max. 40 V IG max. 50 mA Ptot max. 250 mW Gate current (DC) Total power dissipation up to Tamb = 40 C (1) 65 to 150 C Storage temperature range Tstg Junction temperature Tj max.
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs y-parameters (common source) VDS = 20 V; VGS = 0; f = 1 MHz; Tamb = 25 C PMBF4391 Input capacitance PMBF4392 PMBF4393 Cis 14 14 14 pF Feedback capacitance VGS = 12 V ; VDS = 0 Crs 3.5 pF VGS = 7 V ; VDS = 0 Crs 3.5 pF VGS = 5 V ; VDS = 0 Crs 3.
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs Pulse generator: tr 0.5 ns tf 0.5 ns tp = 100 s = 0.01 Oscilloscope: 1 μF 50 Ω handbook, halfpage VDD 10 nF Ri 10 μF RL DUT SAMPLING SCOPE 50 Ω 50 Ω MBK289 Fig.3 Test circuit. MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 0 40 80 120 200 160 Tamb (°C) Fig.4 Power derating curve.
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
