DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995
NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 3 handbook, halfpage d g s PINNING 1 1 = drain 2 Top view 2 = source MAM386 3 = gate Note 1.
NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate-drain voltage VGDO max. 30 V Gate current (d.c.) IG max. 50 mA Ptot max. 300 mW Total power dissipation up to Tamb = 25 C(1) Storage temperature range Tstg Junction temperature Tj Rth j-a 65 to 150 C max.
NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified Input capacitance, f = 1 MHz VGS = 10 V; VDS = 0 V Cis typ. 8 pF VGS = VDS = 0 Cis typ. 30 pF Crs typ. 4 pF Delay time td typ. 2 5 15 20 ns Rise time tr typ. 5 10 20 25 ns Turn-on time ton typ. 7 15 35 45 ns Storage temperature ts typ. 5 10 15 20 ns Fall time tf typ.
NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification P-channel silicon field-effect transistors Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
