Datasheet

1. Product profile
1.1 General description
Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.
1.2 Features and benefits
 Low noise
 Interchangeability of drain and source connections
 High gain.
1.3 Applications
 AM input stage in car radios
 VHF amplifiers
 Oscillators and mixers.
1.4 Quick reference data
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
Rev. 4 — 20 September 2011 Product data sheet
SOT23
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 25 V
V
GSoff
gate-source cut-off voltage
PMBFJ308 V
DS
=10V; I
D
=1A 1- 6.5 V
PMBFJ309 V
DS
=10V; I
D
=1A 1- 4V
PMBFJ310 V
DS
=10V; I
D
=1A 2- 6.5 V