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1. Product profile

1.1 General description

PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD)

plastic package.

NPN complement: PMBT3904.

1.2 Features and benefits

 Collector-emitter voltage V

CEO

= −40 V

 Collector current capability I

= −200 mA

1.3 Applications

 General amplification and switching

1.4 Quick reference data

2. Pinning information

PMBT3906

PNP switching transistor

Rev. 06 — 2 March 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −40 V

collector current - - −200 mA

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

06aab2

Summary of content (11 pages)

PAGE 1
PMBT3906 PNP switching transistor Rev. 06 — 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. 1.2 Features and benefits Collector-emitter voltage VCEO = −40 V Collector current capability IC = −200 mA 1.3 Applications General amplification and switching 1.4 Quick reference data Table 1.
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PMBT3906 NXP Semiconductors PNP switching transistor 3. Ordering information Table 3. Ordering information Type number PMBT3906 Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMBT3906 *2A [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5.
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PMBT3906 NXP Semiconductors PNP switching transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) [1] Conditions Min Typ Max Unit - - 500 K/W Min Typ Max Unit - - −50 nA - - −50 nA IC = −0.1 mA 60 - - IC = −1 mA 80 - - IC = −10 mA 100 - 300 IC = −50 mA 60 - - thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB. 7. Characteristics Table 7.
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PMBT3906 NXP Semiconductors PNP switching transistor mhc459 600 hFE 006aab845 −250 IC (mA) IB (mA) = −1.5 −200 −1.35 (1) −1.2 400 −150 −0.9 −0.75 −0.6 −100 (2) −1.05 −0.45 200 (3) 0 −10−1 −1 −0.3 −50 −10 −102 IC (mA) 0 −103 VCE = −1 V −0.15 0 −2 −4 −6 −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. DC current gain as a function of collector current; typical values mhc461 −1200 VBE (mV) Fig 2.
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PMBT3906 NXP Semiconductors PNP switching transistor mhc463 −103 VCEsat (mV) (1) (2) −102 (3) −10 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values PMBT3906_6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 06 — 2 March 2010 © NXP B.V. 2010. All rights reserved.
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PMBT3906 NXP Semiconductors PNP switching transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on Fig 6. tf t off 006aaa266 BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VI = 5 V; T = 500 μs; tp = 10 μs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.
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PMBT3906 NXP Semiconductors PNP switching transistor 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 8. 0.15 0.09 04-11-04 Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PMBT3906 NXP Semiconductors PNP switching transistor 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3906_6 20100302 Product data sheet - PMBT3906_N_5 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • Legal texts have been adapted to the new company name where appropriate.
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PMBT3906 NXP Semiconductors PNP switching transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMBT3906 NXP Semiconductors PNP switching transistor 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMBT3906_6 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 06 — 2 March 2010 © NXP B.V. 2010. All rights reserved.
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PMBT3906 NXP Semiconductors PNP switching transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . .