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1. Product proﬁle

1.1 General description

NPN high-voltage low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Low current (max. 300 mA)

n High voltage (max. 400 V)

n AEC-Q101 qualiﬁed

1.3 Applications

n LED driver for LED chain module

n LCD backlighting

n High Intensity Discharge (HID) front lighting

n Automotive motor management

n Hook switch for wired telecom

n Switch mode power supply

1.4 Quick reference data

PMBTA44

400 V, 0.3 A NPN high-voltage low V

CEsat

(BISS) transistor

Rev. 01 — 22 February 2008 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 400 V

collector current - - 300 mA

DC current gain V

=10V; I

=10mA 50 - 200

Summary of content (12 pages)

PAGE 1
PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low current (max. 300 mA) n High voltage (max. 400 V) n AEC-Q101 qualified 1.
PAGE 2
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number PMBTA44 Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
PAGE 3
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) [1] Thermal characteristics Parameter Conditions [1] thermal resistance from junction to in free air ambient Min Typ Max Unit - - 500 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab151 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 1 0.02 0.
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PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 6
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 006aab190 200 006aab191 0.3 IB (mA) = 26 hFE IC (A) 23.4 20.8 150 18.2 (1) 0.2 15.6 13 10.4 (2) 7.8 100 5.2 0.1 (3) 2.6 50 0 10−1 1 10 102 103 0 0 1 2 3 4 IC (mA) 5 VCE (V) Tamb = 25 °C VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values 006aab192 1.2 VBE (V) Fig 4.
PAGE 7
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 006aab194 1 006aab195 103 RCEsat (Ω) VCEsat (V) 102 10−1 10 (1) (2) (3) (1) (2) (3) 1 10−2 10−1 1 10 102 103 10−1 10−1 1 IC (mA) IC/IB = 5 102 103 IC (mA) IC/IB = 5 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8.
PAGE 8
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 9.
PAGE 9
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 11. Soldering 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 2.70 0.85 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 10. Reflow soldering footprint SOT23 (TO-236AB) 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 11.
PAGE 10
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBTA44_1 20080222 Product data sheet - - PMBTA44_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
PAGE 11
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 12
PMBTA44 NXP Semiconductors 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . .