Datasheet

1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small
and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
 Exposed drain pad for excellent
thermal conduction
1.3 Applications
 Charging switch for portable devices
 DC-to-DC converters
 Small brushless DC motor drive
 Power management in battery-driven
portables
 Hard disc and computing power
management
1.4 Quick reference data
PMCPB5530X
20 V, complementary Trench MOSFET
Rev. 1 — 26 June 2012 Product data sheet
DFN2020-6
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1 (N-channel), Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=3A; T
j
= 25 °C - 26 34 mΩ
TR2 (P-channel), Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=-4.5V; I
D
=-3.4A; T
j
= 25 °C - 55 70 mΩ
TR1 (N-channel)
V
DS
drain-source voltage T
j
=25°C --20V
V
GS
gate-source voltage -12 - 12 V
I
D
drain current V
GS
=4.5V; T
amb
=25°C; t ≤ 5 s
[1]
--5.3A